Power rails for stacked semiconductor device

ABSTRACT

The present disclosure describes a method to form a stacked semiconductor device with power rails. The method includes forming the stacked semiconductor device on a first surface of a substrate. The stacked semiconductor device includes a first fin structure, an isolation structure on the first fin structure, and a second fin structure above the first fin structure and in contact with the isolation structure. The first fin structure includes a first source/drain (S/D) region, and the second fin structure includes a second S/D region. The method also includes etching a second surface of the substrate and a portion of the first S/D region or the second S/D region to form an opening. The second surface is opposite to the first surface. The method further includes forming a dielectric barrier in the opening and forming an S/D contact in the opening.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. patentapplication Ser. No. 16/997,062, filed on Aug. 19, 2020, titled “PowerRails for Stacked Semiconductor Device,” which is incorporated herein byreference in its entirety.

BACKGROUND

With advances in semiconductor technology, there has been increasingdemand for higher storage capacity, faster processing systems, higherperformance, and lower costs. To meet these demands, the semiconductorindustry continues to scale down the dimensions of semiconductordevices, such as metal oxide semiconductor field effect transistors(MOSFETs), including planar MOSFETs and fin field effect transistors(finFETs). Such scaling down has increased the complexity ofsemiconductor manufacturing processes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures.

FIGS. 1A and 1B illustrate an isometric view and a partialcross-sectional view of a vertically stacked semiconductor device withbottom power rails, respectively, in accordance with some embodiments.

FIGS. 1C, 1D, and 1E illustrate an isometric view, a partialcross-sectional view, and a layout view of a crossover-stackedsemiconductor device with bottom power rails, respectively, inaccordance with some embodiments.

FIG. 2 is a flow diagram of a method for fabricating a crossover-stackedsemiconductor device with bottom power rails, in accordance with someembodiments.

FIGS. 3A-9A illustrate partial isometric views of a crossover-stackedsemiconductor device with bottom power rails at various stages of itsfabrication process, in accordance with some embodiments.

FIGS. 3B-9B illustrate partial cross-sectional views of acrossover-stacked semiconductor device with bottom power rails atvarious stages of its fabrication process, in accordance with someembodiments.

FIGS. 10A and 10B illustrate partial cross-sectional views ofcrossover-stacked semiconductor devices with various bottom power rails,in accordance with some embodiments.

Illustrative embodiments will now be described with reference to theaccompanying drawings. In the drawings, like reference numeralsgenerally indicate identical, functionally similar, and/or structurallysimilar elements.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over a second feature in the description that followsmay include embodiments in which the first and second features areformed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Asused herein, the formation of a first feature on a second feature meansthe first feature is formed in direct contact with the second feature.In addition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition does not in itselfdictate a relationship between the various embodiments and/orconfigurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “exemplary,” etc., indicatethat the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of oneskilled in the art to effect such feature, structure or characteristicin connection with other embodiments whether or not explicitlydescribed.

It is to be understood that the phraseology or terminology herein is forthe purpose of description and not of limitation, such that theterminology or phraseology of the present specification is to beinterpreted by those skilled in relevant art(s) in light of theteachings herein.

The term “nominal” as used herein refers to a desired, or target, valueof a characteristic or parameter for a component or a process operation,set during the design phase of a product or a process, together with arange of values above and/or below the desired value. The range ofvalues is typically due to slight variations in manufacturing processesor tolerances.

As used herein, the term “substrate” describes a material onto whichsubsequent material layers are added. The substrate itself may bepatterned. Materials added on top of the substrate may be patterned ormay remain unpatterned. Furthermore, the substrate may be a wide arrayof semiconductor materials, such as silicon, germanium, galliumarsenide, and indium phosphide. Alternatively, the substrate may be madefrom an electrically non-conductive material, such as glass and sapphirewafer.

As used herein, the term “high-k” refers to a high dielectric constant.In the field of semiconductor device structures and manufacturingprocesses, high-k refers to a dielectric constant that is greater thanthe dielectric constant of SiO₂ (e.g., greater than about 3.9).

As used herein, the term “low-k” refers to a small dielectric constant.In the field of semiconductor device structures and manufacturingprocesses, low-k refers to a dielectric constant that is less than thedielectric constant of SiO₂ (e.g., less than about 3.9).

As used herein, the term “p-type” defines a structure, layer, and/orregion as being doped with p-type dopants, such as boron.

As used herein, the term “n-type” defines a structure, layer, and/orregion as being doped with n-type dopants, such as phosphorus.

As used herein, the term “vertical,” means nominally along a directionperpendicular to the surface of a substrate.

As used herein, the term “crossover,” means structures along directionscrossing at a point.

In some embodiments, the terms “about” and “substantially” can indicatea value of a given quantity that varies within 5% of the value (e.g.,±1%, ±2%, ±3%, ±4%, ±5% of the value). These values are merely examplesand are not intended to be limiting. The terms “about” and“substantially” can refer to a percentage of the values as interpretedby those skilled in relevant art(s) in light of the teachings herein.

Embodiments of the fin structures disclosed herein may be patterned byany suitable method. For example, the fin structures may be patternedusing one or more photolithography processes, includingdouble-patterning or multi-patterning processes. Double-patterning ormulti-patterning processes can combine photolithography and self-alignedprocesses, forming patterns that have, for example, pitches smaller thanwhat is otherwise obtainable using a single, direct photolithographyprocess. For example, a sacrificial layer is formed over a substrate andpatterned using a photolithography process. Spacers are formed alongsidethe patterned sacrificial layer using a self-aligned process. Thesacrificial layer is then removed, and the remaining spacers may then beused to pattern the fin structures.

With advances in semiconductor technology, multi-gate devices have beenintroduced to improve gate control by increasing gate-channel coupling,reduce off-state current, and reduce short-channel effects (SCEs). Onesuch multi-gate device is the gate-all-around fin field effecttransistor (GAA finFET). The GAA finFET device provides a channel in astacked nanosheet/nanowire configuration. The GAA finFET device derivesits name from the gate structure that can extend around the channel andprovide gate control of the channel on two or four sides of the channel.GAA finFET devices are compatible with MOSFET manufacturing processesand their structure allows them to be scaled while maintaining gatecontrol and mitigating SCEs.

With increasing demand for lower power consumption, high performance,and small area (collectively referred to as “PPA”) of semiconductordevices, GAA finFET devices can have their challenges. For example, thestacked nanosheets/nanowires can have undesirable parasitic capacitancebetween each layer, which can negatively affect device performance ofGAA finFET devices. In addition, the stacked nanosheets/nanowires canhave reduced active channel area compared with a continuous fin channel,and increasing the number of stacked nanosheets/nanowires layers canincrease parasitic capacitances and parasitic resistances of GAA finFETdevices. Further, GAA finFET devices in a same plane and fabricated fromthe same stack of nanosheets/nanowires can take large area, especiallywith metal interconnects of the GAA finFET devices connected to thesource/drain contacts and the gate contacts on the same side of theplane.

Various embodiments in the present disclosure provide methods forforming a stacked semiconductor device with power rails. According tosome embodiments, the stacked semiconductor device can include a firstGAA finFET having a first fin structure vertically stacked on top of asecond GAA finFET having a second fin structure. In some embodiments,the first fin structure and the second fin structure can extend along asame direction (referred to as “vertically stacked”). In someembodiments, the first fin structure can extend along a direction about90 degrees related to a direction of the second fin structure (referredto as “crossover-stacked”). Crossover-stacked GAA finFETs can reduceparasitic capacitances and resistances and thus improve deviceperformance.

In some embodiments, the first GAA finFET can have a first source/drain(S/D) contact and the second GAA finFET can have a second S/D contact.The first source/drain (S/D) contact and the second S/D contact can bothconnect to S/D power supply lines on a second surface (e.g., bottomsurface) of a substrate (also referred to herein as “bottom powerrails”), opposite to a first surface (e.g., top surface) of thesubstrate which can include first and second GAA finFETs and a gatecontact connected to a gate power supply line. In some embodiments, thefirst S/D contact or the second S/D contact can connect to S/D powersupply lines on a second surface (e.g., bottom surface) of the substrate(referred to herein as “bottom power rails”), opposite to the firstsurface (e.g., top surface) of the substrate, which can include thefirst and second GAA finFETs 102A and 102B and the gate contactconnected to a gate power supply line. In some embodiments,crossover-stacked GAA finFETs with bottom power rails can achieve adevice area reduction of about 30% to about 50%. With area reduction andshorter metal interconnects due to bottom power rails, parasiticcapacitances and parasitic resistances can be reduced, thus improvingdevice performance. As a result, the voltage drop on the metalinterconnects can be reduced by about 30% to about 50%. In someembodiments, cross-over stacked GAA finFETs with bottom power rails canimprove overall PPA performance of GAA finFETs.

FIG. 1A illustrates an isometric view of a vertically stackedsemiconductor device 100-1 with bottom power rails, according to someembodiments. A GAA finFET 102B is vertically stacked on top of a GAAfinFET 102A and S/D contacts of GAA finFETs 102A and 102B are connectedto bottom power rails. FIG. 1B illustrates a partial cross-sectionalview along line B-B of vertically stacked semiconductor device 100-1,according to some embodiments. In some embodiments, FIGS. 1A and 1B showa portion of an IC layout where the dimensions of the fin structures andthe dimensions of the gate structures can be similar or different fromthe ones shown in FIGS. 1A and 1B.

Referring to FIGS. 1A and 1B, vertically stacked semiconductor device100-1 can include GAA finFETs 102A and 102B, S/D interconnects 113 and115 connected to respective S/D contacts 103 and 105 of GAA finFETs 102Aand 102B, a gate structure 112, and a gate contact 101 connected to gateinterconnects 111. GAA finFETs 102A and 102B can further include finstructures 104A and 104B, gate structures 112A and 112B, inner spacerstructures 116A and 116B, an isolation structure 120, a doping layer126, a semiconductor layer 128, and an epitaxial layer 130.

In some embodiments, GAA finFETs 102A and 102B can be both p-typefinFETs (PFETs), both n-type finFETs (NFETs), or one of eachconductivity type finFET. In some embodiments, GAA finFETs 102A can bep-type (also referred to as “PFET 102A”), GAA finFETs 102B can be n-type(also referred to as “NFET 102B”) and vertically stacked semiconductordevice 100-1 can be an inverter logic device. Though FIGS. 1A and 1Bshow two GAA finFETs, vertically stacked semiconductor device 100-1 canhave any number of GAA finFETs. Also, though FIGS. 1A and 1B show onegate structure 112, vertically stacked semiconductor device 100-1 canhave additional gate structures similar and parallel to gate structure112. In addition, semiconductor device 100-1 can be incorporated into anintegrated circuit through the use of other structural components, suchas contacts, conductive vias, conductive lines, dielectric layers, andpassivation layers, that are not shown for simplicity. The discussion ofelements of GAA finFETs 104A and 104B with the same annotations appliesto each other, unless mentioned otherwise.

As shown in FIG. 1A, PFET 102A can be formed on a substrate 106.Substrate 106 can be a semiconductor material, such as silicon (Si). Insome embodiments, substrate 106 can include a crystalline siliconsubstrate (e.g., wafer). In some embodiments, substrate 106 can include(i) an elementary semiconductor, such as germanium (Ge); (ii) a compoundsemiconductor including silicon carbide (SiC), silicon arsenide (SiAs),gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide(InP), indium arsenide (InAs), indium antimonide (InSb), and/or a III-Vsemiconductor material; (iii) an alloy semiconductor including silicongermanium (SiGe), silicon germanium carbide (SiGeC), germanium stannum(GeSn), silicon germanium stannum (SiGeSn), gallium arsenic phosphide(GaAsP), gallium indium phosphide (GalnP), gallium indium arsenide(GalnAs), gallium indium arsenic phosphide (GaInAsP), aluminum indiumarsenide (AlInAs), and/or aluminum gallium arsenide (AlGaAs); (iv) asilicon-on-insulator (SOI) structure; (v) a silicon germanium (SiGe)-oninsulator structure (SiGeOl); (vi) germanium-on-insulator (GeOI)structure; or (vii) a combination thereof. Further, substrate 106 can bedoped depending on design requirements (e.g., p-type substrate or n-typesubstrate). In some embodiments, substrate 106 can be doped with p-typedopants (e.g., boron, indium, aluminum, or gallium) or n-type dopants(e.g., phosphorus or arsenic).

As shown in FIGS. 1A and 1B, semiconductor device 100-1 can include finstructures 104A and 104B extending along an X-axis and through PFET 102Aand NFET 102B, respectively. In some embodiments, fin structures 104Aand 104B can each include stacked fin portions 108A and 108B andepitaxial fin regions 110A and 110B. Each of stacked fin portions 108Aand 108B can include a stack of semiconductor layers 122A and 122B,which can be nanosheets or nanowires. Each of semiconductor layers 122Aand 122B can form a channel region underlying gate structures 112A and112B of PFET 102A and NFET 102B, respectively.

In some embodiments, semiconductor layers 122A and 122B can includesemiconductor materials similar to or different from substrate 106. Insome embodiments, each of semiconductor layers 122A and 122B can includesilicon germanium (SiGe) with Ge in a range from about 5 atomic percentto about 50 atomic percent with any remaining atomic percent being Si orcan include Si without any substantial amount of Ge. The semiconductormaterials of semiconductor layers 122A and 122B can be undoped or can bein-situ doped during its epitaxial growth process using: (i) p-typedopants, such as boron, indium, and gallium; and/or (ii) n-type dopants,such as phosphorus and arsenic. Semiconductor layers 122A and 122B canhave respective thicknesses 122At and 122Bt along a Z-axis, each rangingfrom about 5 nm to about 12 nm. In some embodiments, thickness 122At canbe the same as or different from thickness 122Bt. Semiconductor layers122A and 122B can also have respective spacings 122As and 122Bs along aZ-axis between each other, each ranging from about 6 nm to about 16 nm.In some embodiments, spacing 122As can be the same as or different fromspacing 122Bs. Though three layers of semiconductor layers 122A and 122Bfor each of PFET 102A and NFET 102B are shown in FIGS. 1A and 1B, PFET102A and NFET 102B can each have any number of semiconductor layers 122Aand 122B.

Referring to FIGS. 1A and 1B, epitaxial fin regions 110A and 1101B canbe disposed adjacent to stack fin portions 108A and 108B, respectively.In some embodiments, epitaxial fin regions 110A and 1101B can have anygeometric shape, such as a polygon, an ellipsis, and a circle. Epitaxialfin regions 110A and 110B can include an epitaxially-grown semiconductormaterial. In some embodiments, the epitaxially grown semiconductormaterial is the same material as substrate 106. In some embodiments, theepitaxially-grown semiconductor material includes a different materialfrom substrate 106. In some embodiments, the epitaxially-grownsemiconductor material for epitaxial fin regions 110A and 110B can bethe same as or different from each other. The epitaxially-grownsemiconductor material can include: (i) a semiconductor material, suchas germanium and silicon; (ii) a compound semiconductor material, suchas gallium arsenide and aluminum gallium arsenide; or (iii) asemiconductor alloy, such as silicon germanium and gallium arsenidephosphide.

In some embodiments, epitaxial fin regions 110A can be p-type for PFET102A (also referred to as “p-type epitaxial fin regions 110A”) andepitaxial fin regions 110B can be n-type for NFET 102B (also referred toas “n-type epitaxial fin regions 110B”). In some embodiments, p-typeepitaxial fin regions 110A can include SiGe and can be in-situ dopedduring an epitaxial growth process using p-type dopants, such as boron,indium, and gallium. In some embodiments, p-type epitaxial fin regions110A can have multiple sub-regions that can include SiGe and can differfrom each other based on, for example, doping concentration, epitaxialgrowth process conditions, and/or relative concentration of Ge withrespect to Si.

In some embodiments, n-type epitaxial fin regions 110B can include Siand can be in-situ doped during an epitaxial growth process using n-typedopants, such as phosphorus and arsenic. In some embodiments, n-typeepitaxial fin regions 110B can have multiple n-type epitaxial finsub-regions that can differ from each other based on, for example,doping concentration and/or epitaxial growth process conditions.

Referring to FIGS. 1A and 1B, stacked fin structures 104A and 104B canbe current-carrying structures for respective PFET 102A and NFET 102B.Channel regions of PFET 102A and NFET 102B can be formed in portions oftheir respective stacked fin structures 104A and 104B underlying gatestructures 112A and 112B. Epitaxial fin regions 110A and 110B canfunction as source/drain (S/D) regions of respective PFET 102A and NFET102B.

According to some embodiments, fin structures 104B can be stacked on topof fin structures 104A and isolated by isolation structure 120, as shownin FIGS. 1A and 1B. In some embodiments, stacked fin structures 104A and104B can provide independent control of dimensions and spacings ofsemiconductor layers 122A and 122B respectively. According to someembodiments, isolation structure 120 can isolate PFET 102A and NFET102B. In some embodiments, additional isolation structures betweenstacked fin structures 104A and 104B can further improve the isolation.According to some embodiments, isolation structure 120 can includeinsulating materials, such as silicon oxide, silicon nitride, a low-kmaterial, other suitable insulating materials, and a combinationthereof. In some embodiments, isolation structure 120 can include afirst portion on stacked fin portions 108A and a second portion onepitaxial fin regions 110A. In some embodiments, isolation structure 120can have a vertical dimension (e.g., thickness) 120 t along a Z-axisranging from about 5 nm to about 10 nm.

As shown in FIGS. 1A and 1B, NFET 102B can be formed on epitaxial layer130, semiconductor layer 128, and doping layer 126 above PFET 102A. Insome embodiments, semiconductor layer 128 and doping layer 126 can serveas a substrate layer 127 for NFET 102B. Doping layer 126 can be disposedin contact with isolation structure 120 above PFET 102A and includesemiconductor materials similar to or different from substrate 106. Insome embodiments, doping layer 126 can include Si. In some embodiments,the semiconductor materials of doping layer 126 can be in-situ dopedusing a similar epitaxial growth process as semiconductor layers 122Aand 122B. Doping layer 126 can have a thickness 126 t along a Z-axisranging from about 5 nm to about 10 nm. In some embodiments, dopinglayer 126 can be doped with a different conductivity type from substrate106, such as p-type for doping layer 126 and n-type for substrate 106.In some embodiments, doping layer 126 can serve as an implant well forNFET 102B.

Semiconductor layer 128 can be disposed on doping layer 126 and includesemiconductor materials similar to or different from doping layer 126.In some embodiments, semiconductor layer 128 can include Si. Thesemiconductor materials of semiconductor layers 122 can be undoped orcan be in-situ doped using a similar epitaxial growth process as dopinglayer 126. Semiconductor layer 128 can have a thickness 128 t along aZ-axis ranging from about 12 nm to about 20 nm. In some embodiments,semiconductor layer 128 can help subsequent growth of epitaxial layer130 and fin structure 104B.

Epitaxial layer 130 can be disposed on top of semiconductor layer 128and isolation structure 120. In some embodiments, epitaxial layer 130can be epitaxially grown on semiconductor layer 128 and merge over theportion of isolation structure 120 on epitaxial fin regions 110A. Insome embodiments, epitaxial layer 130 can help subsequent growth of finstructure 104B. In some embodiments, epitaxial layer 130 can include Siwithout any substantial amount of Ge. In some embodiments, epitaxiallayer 130 can have a thickness 130 t along a Z-axis ranging from about10 nm to about 20 nm.

Referring to FIGS. 1A and 1B, gate structures 112A and 112B can bemulti-layered structures and can be wrapped around stacked fin portions108A and 108B. In some embodiments, each of semiconductor layers 122Aand 122B of stacked fin portions 108A and 108B can be wrapped around byone of gate structures 112A and 112B or one or more layers of one ofgate structures 112A and 112B respectively, for which gate structures112A and 112B can be referred to as “gate-all-around (GAA) structures”or “horizontal gate-all-around structures” and finFETs 102A and 102B canbe referred to as “GAA FETs” or “GAA finFETs.”

In some embodiments, gate structures 112A and 112B can include singlelayer or a stack of layers of gate electrode wrapping aroundsemiconductor layers 122A and 122B respectively. In some embodiments,PFET 102A can include p-type work function materials for a gateelectrode of gate structure 112A. In some embodiments, NFET 102B caninclude n-type work function materials for a gate electrode of gatestructure 112B. In some embodiments, the gate electrodes of gatestructures 112A and 112B can include, for example, aluminum (Al), copper(Cu), tungsten (W), titanium (Ti), tantalum (Ta), titanium nitride(TiN), tantalum nitride (TaN), nickel silicide (NiSi), cobalt silicide(CoSi), silver (Ag), metal alloys, or combinations thereof.

In some embodiments, gate dielectric layers 114A and 114B can bedisposed between semiconductor layers 122A and 122B and gate structures112A and 112B, respectively. In some embodiments, gate dielectric layers114A and 114B can include (i) a layer of silicon oxide, silicon nitride,and/or silicon oxynitride, (ii) a high-k dielectric material, such ashafnium oxide (HfO₂), (iii) a negative capacitance (NC) dielectricmaterial doped with aluminum (Al), gadolinium (Gd), silicon (Si),strontium (Sr), scandium (Sc), yttrium (Y), zirconium (Zr), lanthanum(La), or (iv) a combination thereof. In some embodiments, gatedielectric layers 114A and 114B can include a single layer or a stack ofinsulating material layers.

In some embodiments, gate dielectric layers 114A and 114B can include anNC dielectric material with ferroelectric properties, such as hafniumoxide (HfO₂), hafnium aluminum oxide (HfAIO), hafnium silicate (HfSiO),hafnium zirconium oxide (HfZrO), and the like. The ferroclectricproperty of the dielectric material of gate dielectric layers 114A and114B can be affected by various factors including, but not limited to,the atomic elements of the dielectric material, the atomic percentage ofthe atomic elements, and/or the phase of the crystal structure of thedielectric material. The phase can also be affected by the depositionprocess conditions and post-treatment conditions for forming thedielectric material. Thus, a dielectric material having the same atomicelements and/or the same atomic percentages of the atomic elements asthe dielectric material of gate dielectric layers 114A and 114B may notexhibit negative capacitance property, and thus, many not be consideredas an NC dielectric material.

In some embodiments, gate dielectric layers 114A and 114B can include ahigh-k dielectric material in orthorhombic phase (e.g., high-k HfO₂ inorthorhombic phase) and/or a high-k dielectric material subjected to oneor more treatment methods, such as doping, stressing, and thermalannealing. In some embodiments, gate dielectric layers 114A and 114B caninclude a stable orthorhombic phase NC dielectric material formed bydoping and/or thermal annealing HfO₂ with metals, such as aluminum (Al),gadolinium (Gd), silicon (Si), yttrium (Y), zirconium (Zr), and acombination thereof. Other materials and formation methods for NCdielectric materials of gate dielectric layers 114A and 114B are withinthe scope and spirit of this disclosure.

The NC dielectric material in gate dielectric layers 114A and 114B canreduce a subthreshold swing (SS) through internal voltage amplificationmechanism and increase a channel on-current to off-current (Ion/Ioff)ratio of GAA finFETs 102A and 102B, thus achieving faster deviceoperation along with lower power consumption. In some embodiments, thepower consumption can be reduced by about 30% to about 50%. In someembodiments, fin structures 104A and 104B can have each one or more NClayers between respective semiconductor layers 122A and 122B to reduceparasitic capacitances for GAA finFETs 102A and 102B.

Referring to FIGS. 1A and 1B, inner spacer structures 116A and 116B canbe disposed between epitaxial fin regions 110A and 110B and portions ofgate structures 112A and 112B, according to some embodiments. Innerspacer structures 116A and 116B can include a dielectric material, suchas SiOC, SiCN, SiOCN, SiN, silicon oxide (SiO_(x)), silicon oxynitride(SiO_(y)N), and a combination thereof. In some embodiments, inner spacerstructures 116A and 116B can include a single layer or multiple layersof insulating materials. In some embodiments, inner spacer structures116A and 116B can isolate gate structures 112A and 112B and epitaxialfin regions 110A and 110B.

Referring to FIGS. 1A and 1B, gate interconnects 111 can be connected toa gate power supply line, and S/D interconnects 113 and 115 can beconnected to S/D power supply and ground lines. In some embodiments,gate interconnects 111 can be connected to a gate power supply lineabove PFET 102A and NFET 102B on a first surface of substrate 106, andSID interconnects 113 and 115 can be connected to S/D power supply andground lines below PFET 102A and NFET 102B on a second surface ofsubstrate 106 (also referred to herein as “bottom power rails”). Thefirst surface can be opposite to the second surface. For example, thedrain side of PFET 102A can be connected to a buried Vdd power supplyline, and the source side of NFET 102B can be connected to a buried Vsspower supply line. The bottom power rails can reduce device areas andinterconnects, thus reducing power consumption. In some embodiments,compared with GAA finFETs without stacked fin structures and bottompower rails, vertically stacked GAA finFETs with bottom power rails canachieve a device area reduction of about 30% to about 50% and a powerconsumption reduction of about 30% to about 50%.

In some embodiments, gate interconnects 111 can be connected to gatestructures 112A and 112B through gate contacts 101. In some embodiments,S/D interconnects 113 and 115 can be connected to S/D regions of PFET102A and NFET 102B through S/D contacts 103 and 105, respectively. Insome embodiments, gate contacts 112A and 112B and S/D contacts 103 and105 can include a silicide layer and a metal contact. Examples of metalused for forming the silicide layer are Co, Ti, and Ni. In someembodiments, the metal contact can include, for example, tungsten (W),cobalt (Co), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta),titanium nitride (TiN), tantalum nitride (TaN), nickel silicide (NiSi),silver (Ag), ruthenium (Ru), tantalum carbide (TaC), tantalum siliconnitride (TaSiN), tantalum carbon nitride (TaCN), titanium aluminum(TiAl), titanium aluminum nitride (TiAIN), tungsten nitride (WN), metalalloys, or combinations thereof.

In some embodiments, semiconductor device 100-1 can further include STIregions, gate dielectric layers, interlayer dielectric (ILD) layers,etch stop layer (ESL), and other suitable layers and structures, whichare not shown for simplicity.

FIGS. 1C and 1D illustrate an isometric view and a partialcross-sectional view of a crossover-stacked semiconductor device 100-2with bottom power rails, respectively, in accordance with someembodiments. For illustration purposes, the cross-sectional view of NFET102B in FIG. 1D is rotated about 90 degrees to be shown together withthe cross-sectional view of PFET 102A. The dots between PFET 102A andgate interconnects 111 can represent one or more layers between them,which are not described in detail. Elements in FIGS. 1C-1D with the sameannotations as elements in FIGS. 1A-1B are described above. As shown inFIG. 1C, the fin structure of PFET 102A can extend along a directionabout 90 degrees to a direction that the fin structure of NFET 102B canextend. In some embodiments, gate contact structure 101 and gateinterconnects 111 can be fabricated on a first surface of substrate 106connected to gate structure 112B of NFET 102B. The dots in gateinterconnects can represent one or more layers (e.g., one or more metallines and/or metal vias) in gate interconnects 111. In some embodiments,substrate 106 with PFET 102A and NFET 102B can be bonded to a carriersubstrate 134 by a bonding layer 132 on the first surface (e.g., on thesame side of PFET 102A and NFET 102B). In some embodiments, carriersubstrate 134 can include semiconductor materials similar to ordifferent from substrate 106. In some embodiments, carrier substrate 134can include silicon. In some embodiments, bonding layer 132 can includesilicon oxide or other suitable materials to bond carrier substrate 134to substrate 106. In some embodiments, bonding layer 132 can have athickness 132 t along a Z-axis ranging from about 20 nm to about 50 nm.

In some embodiments, S/D contact structures 103 and 105, S/Dinterconnects 113 and 115, and bottom power rails can be fabricated on asecond surface of substrate 106 connected to S/D regions of PFET 102Aand NFET 102B (e.g., on the opposite side of PFET 102A and NFET 102B).The second surface is opposite to the first surface. In someembodiments, crossover-stacked semiconductor device 100-2 can furtherreduce the device area and parasitic capacitances. In some embodiments,compared with GAA finFETs without stacked fin structures and bottompower rails, crossover-stacked GAA finFETs with bottom power rails canachieve improved device performance, in addition to a device areareduction of about 30% to about 50% and a power consumption reduction ofabout 30% to about 50%.

Referring to FIG. 1D, crossover-stacked semiconductor device 100-2 canfurther include shallow trench isolation (STI) regions 118, a dielectricbarrier 136, a dielectric layer 138, contact layers 144A and 144B, blockstructures 146A and 146B, and cap structures 148A and 148B. S/D contactstructures 103 of NFET 102B can include silicide layers 140B and metalcontacts 142B. S/D contact structure 105 of PFET 102A can includesilicide layers 140A and metal contacts 142A.

STI regions 118 can provide electrical isolation between PFET 102A andNFET 102B from each other and from neighboring GAA finFETs withdifferent fin structures (not shown) on substrate 106 and/or neighboringactive and passive elements (not shown) integrated with or deposited onsubstrate 106. STI regions 118 can be made of a dielectric material. Insome embodiments, STI regions 104 can include silicon oxide, siliconnitride, silicon oxynitride, fluorine-doped silicate glass (FSG), alow-k dielectric material, and/or other suitable insulating materials.

Dielectric layer 138 can include the same insulating material as STIregions 118. In some embodiments, dielectric layer 138 can includesilicon oxide. In some embodiments, dielectric layer 138 can improveisolation between adjacent S/D contacts. Dielectric barrier 136 caninclude a dielectric material to isolate S/D contact structures 103 and105 from surrounding structures. In some embodiments, dielectric barrier136 can include silicon nitride. Contact layers 144A and 144B canconnect epitaxial fin regions 110A and 110B respectively to S/D contactsif the S/D contacts are fabricated on the same surface of substrate 106as gate structures 112A and 112B. In some embodiments, contact layers144A and 144B can include silicide, metals, and other suitableconductive materials. Block structure 146A and 146B can block theconnection of S/D regions (e.g., epitaxial fin regions 110A and 110B) tointerconnects on the same surface of substrate 106 as gate structures112A and 112B. In some embodiments, block structure 146A and 146B caninclude a dielectric material of silicon oxide. Cap structures 148A and148B can block the connection of S/D regions (e.g., epitaxial finregions 110A and 1101B) to interconnects on the same surface ofsubstrate 106 as gate structures 112A and 112B. In some embodiments, capstructure 148A and 148B can include a dielectric material of siliconnitride.

FIG. 1E is a layout view of crossover-stacked semiconductor device 100-2with bottom power rails, in accordance with some embodiments. Withbottom power rails, metal interconnects can be easier for placing androuting design as compared to a semiconductor device without the bottompower rails. As shown in FIG. 1E, the layout view can be compact andachieve a device area reduction of about 30% to about 50% compared withGAA finFETs without stacked fin structures and bottom power rails.

FIG. 2 is a flow diagram of a method 200 for fabricatingcrossover-stacked semiconductor device 100-2 with bottom power rails, inaccordance with some embodiments. Additional fabrication operations maybe performed between various operations of method 200 and may be omittedmerely for clarity and ease of description. Additionally, some of theoperations may be performed simultaneously, or in a different order thanthe ones shown in FIG. 2 . Accordingly, additional processes can beprovided before, during, and/or after method 200; these additionalprocesses can be briefly described herein. For example purposes, theoperations illustrated in FIG. 2 will be described with reference to theexample fabrication process for fabricating crossover-stackedsemiconductor device 100-2 as illustrated in FIGS. 3A-10B. FIGS. 3A-9Aare isometric views of semiconductor device 100-2 of FIG. 1C at variousstages of its fabrication, according to some embodiments. FIGS. 3B-9B,10A, and 10B are partial cross-sectional views of semiconductor device100-2 of FIG. 1C at various stages of its fabrication, according to someembodiments. Although FIGS. 3A-10B illustrate fabrication processes ofcrossover-stacked semiconductor device 100-2 with bottom power rails,method 200 can be applied to vertically stacked semiconductor device100-1 with bottom power rails and other semiconductor devices. Elementsin FIGS. 3A-10B with the same annotations as elements in FIGS. 1A-1E aredescribed above.

In referring to FIG. 2 , method 200 begins with operation 210 and theprocess of forming a stacked semiconductor device on a first surface ofa substrate. The stacked semiconductor device includes a first finstructure, an isolation structure on the first fin structure, and asecond fin structure above the first fin structure and in contact withthe isolation structure. The first fin structure includes a firstsource/drain (S/D) region and the second fin structure includes a secondS/D region. For example, as shown in FIGS. 3A-3B, crossover-stackedsemiconductor device 100-2 can be formed on a first surface 106S1 ofsubstrate 106. FIGS. 3A and 3B illustrate a partial isometric view andpartial cross-sectional view of crossover-stacked semiconductor device100-2, according to some embodiments. Similar to FIG. 1D, thecross-sectional view of NFET 102B in FIG. 3B and the subsequentcross-sectional view figures are rotated about 90 degrees forillustration purposes. Crossover-stacked semiconductor device 100-2 caninclude first fin structure 104A, isolation structure 120 on finstructure 104A, and second fin structure 104B above fin structure 104Aand in contact with isolation structure 120. Fin structures 104A and 104B can include epitaxial fin regions 110A and 1110B, respectively. Gatecontact structure 101 and gate interconnects 111 (e.g., metal lines M0,M1, and Mn, and vias V0, V1, and Vn, where n is an integer) can connectgate structures 112B and 112A to a gate power supply line.

The formation of crossover-stacked semiconductor device 100-2 caninclude the formation of fin structure 104A on surface 106S1 ofsubstrate 106, formation of isolation structure 120 on fin structure104A, and formation of fin structure 104B on isolation structure 120.The formation of fin structure 104A can include epitaxially growing astack of semiconductor layers on substrate 106. The semiconductor layerscan include semiconductor materials with oxidation rates and/or etchselectivity different from each other. Epitaxial fin regions 110A can beformed adjacent to the semiconductor layers. A subset of thesemiconductor layers can be replaced with gate structure 112A wrappedaround fin structure 104A. A sacrificial semiconductor layer can beepitaxially grown on the fin structure and subsequently replaced byisolation structure 120. Substrate layer 127 and epitaxial layer 130 canbe formed on isolation structure to facilitate the epitaxial growth ofan additional stack of semiconductor layers, which can subsequently formfin structure 104B. Epitaxial fin regions 1101B can be formed adjacentto the additional semiconductor layers. A subset of the additionalsemiconductor layers can be replaced with gate structure 112B wrappedaround fin structure 104B.

In some embodiments, epitaxial fin regions 110A and 110B can includestop layers 352A and 352B, respectively, adjacent to second surface106S2. In some embodiments, stop layers 352A and 352B can each beepitaxially grown and in-situ doped with a stop dopant. In someembodiments, stop layers 352A and 352B can have a thickness 352At and athickness 352Bt, each ranging from about 3 nm to about 5 nm. In someembodiments, the concentration of the stop dopant in stop layers 352Aand 352B can range from about 10 atomic percent to about 50 atomicpercent.

The stop dopants in stop layers 352A and 352B can stop the subsequentetching process of substrate 106 on epitaxial fin regions 110A and 110B.If thicknesses 352At and 352Bt are less than about 3 nm, the etchingprocess may not stop on stop layers 352A and 352B of epitaxial finregions 110A and 1101B. If thicknesses 352At and 352Bt are greater thanabout 5 nm, stop layers 352A and 352B may have defects and stress, thusnegatively affecting the electrical properties of epitaxial fin regions110A and 1101B. If the concentration of the stop dopant is lower thanabout 10 atomic percent, the etch selectivity between the substrate andthe stop layers may not be sufficient for the etching process to stop onstop layers 352A and 352B. If the concentration of the stop dopant ishigher than about 50 atomic percent, stop layers 352A and 352B may havedefects and stress, thus negatively affecting the electrical propertiesof epitaxial fin regions 110A and 110B.

The formation of crossover-stacked semiconductor device 100-2 can befollowed by formation of bonding layer 132, as shown in FIGS. 3A and 3B.In some embodiments, bonding layer 132 can include a dielectric materialof silicon oxide deposited by a high-density plasma (HDP) depositionprocess. In some embodiments, bonding layer 132 can include othersuitable materials to bond a carrier substrate to bonding layer 132. Insome embodiments, bonding layer 132 can have a thickness 132 t along aZ-axis ranging from about 20 nm to about 50 nm.

The formation of bonding layer 132 can be followed by bonding carriersubstrate 134 to bonding layer 132, as shown in FIGS. 4A and 4B. In someembodiments, carrier substrate 134 and bonding layer 132 can be bondedtogether by a pressure bonding process. In some embodiments, thepressure bonding process can be performed with a pressure from about 30mbar to about 80 mbar at an annealing temperature from about 300° C. toabout 350° C. The bonding force can range from about 3 N to about 5 N,and the bond strength of the oxide-oxide bond formed in the pressurebonding process can rang from about 1.5 J/m² to about 1.7 J/m².

The bonding of carrier substrate 134 to bonding layer 132 can befollowed by flipping substrate 106 above carrier substrate 134 and asubstrate polishing process on a second surface 106S2 of substrate 106,as shown in FIGS. 4 A and 4B. Second surface 106S2 can be a bottomsurface of substrate 106 opposite to first surface 106S1 of substrate106 having crossover-stacked semiconductor device 100-2. In someembodiments, the substrate polishing process can include a grindingprocess, a trimming process, a thinning process, and a chemicalmechanical polishing (CMP) process. After the grinding process,substrate 106 can have a thickness along a Z-axis ranging from about 70μm to about 100 μm. Second surface 106S2 of substrate 106 can be roughafter the grinding process. The trimming process can remove particles onthe edge to protect semiconductor devices on first surface 106S1. Thethinning process can continue removing substrate 106 in smaller steps tohave a smoother second surface 106S2 and avoid over-polishing. In someembodiments, after the thinning process, substrate 106 can have athickness along a Z-axis ranging from about 5 μm to about 25 μm. Afterthe CMP process, substrate 106 can have a thickness along a Z-axisranging from about 100 nm to about 1 μm. Second surface 106S2 can besmoother and transparent after the CMP process. In some embodiments,crossover-stacked semiconductor device 100-2 can be observed throughsecond surface 106S2 after the CMP process. In some embodiments, apatterning process can be performed on second surface 106S2 of substrate106 to form S/D contacts on S/D regions of PFET 102A and NFET 102B.

FIG. 5A illustrates a partial isometric view of crossover-stackedsemiconductor device 100-2, according to some embodiments. FIG. 5A canillustrate the crossover stacking of the fin structures of PFET 102A andNFET 102B. FIG. 5B illustrate a partial cross-sectional view ofcrossover-stacked semiconductor device 100-2 after the CMP process.

In operation 220 of FIG. 2 , a second surface of the substrate and aportion of the first S/D region or the second S/D region are etched toform an opening. The second surface is opposite to the first surface.For example, as shown in FIGS. 6A and 6B, a hard mask layer 654 can bedeposited on second surface 106S2 of substrate 106 and hard mask layer654 can be patterned to expose portions of second surface 102S2 abovethe S/D regions of PFET 102A. Exposed portions of second surface 106S2of substrate 106 and portions of S/D regions (e.g., epitaxial finregions 110A) of PFET 102A can be etched by a directional etchingprocess. In some embodiments, the direction etching process can includea reactive ion etching (RIE) process. In some embodiments, stop layers352A in epitaxial fin regions 110A can stop the directional etchingprocess. After the directional etching process, openings 656 can beformed in substrate 106 and epitaxial fin regions 110A.

In operation 230 of FIG. 2 , a dielectric barrier can be formed in theopening. For example, as shown in FIGS. 6A and 6B, dielectric barrier136 can be formed in openings 656. In some embodiments, the formation ofdielectric barrier 136 can include depositing a dielectric barrier layerand etching a portion of the dielectric layer on epitaxial fin regions110A. In some embodiments, the depositing process can include a blanketdeposition of the dielectric barrier layer in openings 656 and on hardmask layer 654 using chemical vapor deposition (CVD), atomic layerdeposition (ALD), or other suitable deposition processes. In someembodiments, the dielectric barrier layer can include silicon nitride.In some embodiments, the dielectric barrier layer can isolatesubsequently-formed S/D contact structures from surrounding structures(e.g., substrate 106). In some embodiments, the dielectric barrier layercan have a thickness 136 t ranging from about 3 nm to about 5 nm. Ifthickness 136 t is less than about 3 nm, dielectric barrier 136 t maynot isolate subsequently-formed S/D contact structures from surroundingstructures. If thickness 136 t is greater than about 5 nm, the diameterof openings 656 may be reduced and S/D contact structures may not beformed in openings 656.

The blanket deposition of the dielectric barrier layer can be followedby etching a portion of the dielectric barrier layer on epitaxial finregions 110A. In some embodiments, the etching process can include adirectional etch of the blanket deposited dielectric barrier layer onepitaxial fin regions 110A and hard mask layer 654. In some embodiments,the directional etching process can include an RIE process. After thedirection etching process, epitaxial fin regions 110A can be exposed forformation of S/D contacts.

Referring to FIG. 2 , in operation 240, an S/D contact can be formed inthe opening. For example, as shown in FIG. 7B, S/D contact 105 can beformed in openings 656 shown in FIG. 6B. The formation of S/D contact105 can include formation of silicide layers 140A and formation of metalcontacts 142A. Silicide layers 140A can provide a low resistanceinterface between epitaxial fin regions 110A and metal contacts 142A. Insome embodiments, the formation of silicide layers 140A can includedepositing a layer of metal and annealing the layer of metal to formsilicide layers. In some embodiments, silicide layers 140A can includeCo, Ni, Ti, W, Mo, Ti, nickel cobalt alloy (NiCo), Pt, nickel platinumalloy (NiPt), Ir, platinum iridium alloy (PtIr), Er, Yb, Pd, Rh, Nb,titanium silicon nitride (TiSiN), other refractory metals, or acombination thereof.

The formation of silicide layers 140A can be followed by the formationof metal contacts 142A. In some embodiments, the formation of metalcontacts 142A can include blanket depositing a layer of contact metaland polishing the blanket deposited layer of contact metal. In someembodiments, metal contacts 142A can include a conductive material, suchas Ru, Ir, Ni, Os, Rh, Al, Mo, W, Co, Al, and Cu. In some embodiments,metal contacts 142A can include a conductive material with lowresistivity. In some embodiments, S/D contacts 105 can include a linerbetween silicide layers 140A and metal contacts 142A.

The formation of S/D contact 105 can be followed by formation of S/Dcontact 103 on S/D regions of NFET 102B. The formation of S/D contact103 can include the formation of openings 756, formation of dielectricbarrier 136 in openings 756, and formation of silicide layers 140B andmetal contacts 142B, as shown in FIGS. 7A, 7B, 8A, and 8B. The processesof forming SID contact 103 are similar to the processes of forming S/Dcontact 105 as described above.

The formation of S/D contacts 103 and 105 can be followed by replacingsubstrate 106 with dielectric layer 138, as shown in FIGS. 9A and 9B. Insome embodiments, the replacement of substrate 106 with dielectric layer128 can include removing substrate 106 and formation of dielectric layer128. In some embodiments, substrate 106 can be removed by an etchingprocess. The etching process can include a dry etching process, a wetetching process, or other suitable etching processes to remove substrate106.

The removal of substrate 106 can be followed by the formation ofdielectric layer 138 surrounding S/D contacts 103 and 105. In someembodiments, the formation of dielectric layer 138 can include blanketdeposition of dielectric layer 138 and polishing of blank depositeddielectric layer 138. In some embodiments, dielectric layer 138 caninclude silicon oxide. In some embodiments, replacing substrate 106 withdielectric layer 138 can improve isolation between S/D contacts 103 and105.

The replacement of substrate 106 with dielectric layer 138 can befollowed by the formation of S/D interconnects 113 and 115, as shown inFIGS. 1C and 1D. In some embodiments, S/D interconnect 113 can beconnected to a ground Vss (e.g., 0 V). In some embodiments, S/Dinterconnect 115 can be connected to a power supply line Vdd (e.g., 0.5V). As shown in FIGS. 1A-1D, and 3-9D, stacked semiconductor devices100-1 and 100-2, gate contact 101, gate interconnects 111, and gatepower supply lines can be formed on first surface 106S1 (e.g., topsurface) of substrate 106. S/D contacts 103 and 105, S/D interconnects113 and 115, and S/D power supply lines can be formed on second surface106S2 (e.g., bottom surface) of substrate 106. Here, stackedsemiconductor devices 100-1 and 100-2 have bottom power rails.

In some embodiments, compared with GAA finFETs without stacked finstructures and bottom power rails, stacked GAA finFETs 102A and 102Bwith bottom power rails can achieve improved devise performance withreduce parasitic capacitances and resistances, a device area reductionof about 30% to about 50%, and a power consumption reduction of about30% to about 50%.

FIGS. 10A and 10B illustrate partial cross-sectional views ofcrossover-stacked semiconductor devices 100-3 and 100-4 with variousbottom power rail configurations, in accordance with some embodiments.Referring to FIG. 10A, a S/D contact 1003 and a S/D interconnect 1013for NFET 102B can be fabricated on the second surface (e.g., bottomsurface) of the substrate, while S/D contacts and interconnects of PFET102A and gate contact 111 and gate interconnects of PFET 102A and NFET102B can be fabricated on a first surface (e.g., top surface) of thesubstrate. Here, crossover-stacked semiconductor device 100-3 has abottom source contact.

Referring to FIG. 10B, a S/D contact 1005 and a S/D interconnect 1015for PFET 102A can be fabricated on the second surface (e.g., bottomsurface) of the substrate, while S/D contacts and interconnects of NFET102B and gate contact 111 and gate interconnects of PFET 102A and NFET102B can be fabricated on a first surface (e.g., top surface) of thesubstrate. Here, crossover-stacked semiconductor device 100-4 has abottom drain contact.

Various embodiments in the present disclosure provide methods forforming a stacked semiconductor device (e.g., 100-1, 100-2, 100-3, and100-4) with bottom power rails. According to some embodiments, stackedsemiconductor device 100-1 can include GAA finFET 102B having first finstructure 104B vertically stacked on top of second GAA finFET 102Ahaving second fin structure 104A. In some embodiments, first finstructure 104B and second fin structure 104A can extend along an X-axis(referred to as “vertically stacked”). In some embodiments, first finstructure 104B can extend along a direction (e.g., Y-axis) about 90degrees related to a direction (e.g., X-axis) of the second finstructure (referred to as “crossover-stacked”). Crossover-stacked GAAfinFETs 100-2, 100-3, and 100-4 can reduce parasitic capacitances andparasitic resistances and thus improve device performance.

In some embodiments, first source/drain (SMD) contact 103 of first GAAfinFET 102B and second S/D contact 105 of second GAA finFET 102A can beboth connected to S/D power supply lines on second surface 106S2 (e.g.,bottom surface) of substrate 106 (referred to as “bottom power rails”),opposite to first surface 106S1 (e.g., top surface) of substrate 106which can include first and second GAA finFETs 102A and 102B and gatecontact 101 connected to a gate power supply line. In some embodiments,first S/D contact 103 or second S/D contact 105 can connect to S/D powersupply lines on second surface 106S2 (e.g., bottom surface) of substrate106 (referred to as “bottom power rails”), opposite to first surface106S1 (e.g., top surface) of substrate 106, which can include first andsecond GAA finFETs 102A and 102B and gate contact 101 connected to agate power supply line. In some embodiments, crossover-stacked GAAfinFETs with bottom power rails can achieve a device area reduction ofabout 30% to about 50%. With area reduction and shorter metalinterconnects due to bottom power rails, parasitic capacitances andparasitic resistances can be reduced, thus improving device performance.As a result, the voltage drop on the metal interconnects can be reducedby about 30% to about 50%. In some embodiments, cross-over stacked GAAfinFETs with bottom power rails can improve overall PPA performance ofGAA finFETs.

In some embodiments, a method includes forming a stacked semiconductordevice on a first surface of a substrate. The stacked semiconductordevice includes a first fin structure, an isolation structure on thefirst fin structure, and a second fin structure above the first finstructure and in contact with the isolation structure. The first finstructure includes a first source/drain (S/D) region and the second finstructure includes a second SID region. The method further includesetching a second surface of the substrate and a portion of the first SIDregion or the second SID region to form an opening. The second surfaceis opposite to the first surface. The method further includes forming adielectric barrier in the opening and forming an S/D contact in theopening.

In some embodiments, a method includes forming a stacked semiconductordevice on a first surface of a substrate. The stacked semiconductordevice includes a first fin structure, an isolation structure on thefirst fin structure, and a second fin structure above the first finstructure and in contact with the isolation layer. The first finstructure includes a first source/drain (SID) region and the second finstructure includes a second SID region. The method further includesetching a second surface of the substrate and a portion of the first S/Dregion to form a first opening. The second surface is opposite to thefirst surface. The method further includes forming a first dielectricbarrier in the first opening, forming a first SID contact in the firstopening, etching the second surface the substrate and a portion of thesecond S/D region to form a second opening, forming a second dielectricbarrier in the second opening, and forming a second SID contact in thesecond opening.

In some embodiments, an integrated circuit includes a stackedsemiconductor device on a first surface of a substrate. The stackedsemiconductor device includes a first fin structure, an isolationstructure on the first fin structure and a second fin structure abovethe first fin structure and in contact with the isolation structure. Thefirst fin structure includes a first source/drain (S/D) region, and thesecond fin structure includes a second S/D region. The integratedcircuit further includes an S/D contact on a second surface of thesubstrate and connected to the first S/D region or the second S/D regionand a dielectric barrier surrounding the S/D contact. The dielectricbarrier includes silicon nitride.

It is to be appreciated that the Detailed Description section, and notthe Abstract of the Disclosure section, is intended to be used tointerpret the claims. The Abstract of the Disclosure section may setforth one or more but not all possible embodiments of the presentdisclosure as contemplated by the inventor(s), and thus, are notintended to limit the subjoined claims in any way.

The foregoing disclosure outlines features of several embodiments sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art will appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodimentsintroduced herein. Those skilled in the art will also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A method, comprising: forming, on a first surfaceof a substrate, a first device having a first source/drain (S/D) regionstacked over a second device having a second S/D region; etching asecond surface of the substrate and a portion of the first S/D region toform a first opening, wherein the second surface is opposite to thefirst surface; forming, in the first opening, a first S/D contactstructure in contact with the first S/D region; etching the secondsurface of the substrate and a portion of the second S/D region to forma second opening; and forming, in the second opening, a second S/Dcontact structure in contact with the second S/D region.
 2. The methodof claim 1, further comprising: replacing the substrate with adielectric layer; forming a first interconnect connected to the firstS/D contact structure and a second interconnect connected to the secondS/D contact structure; and connecting the first interconnect to a powersupply and the second interconnect to ground.
 3. The method of claim 2,wherein the replacing the substrate comprises: removing the substrate;and forming the dielectric layer over the first and second devices,wherein the dielectric layer comprises silicon oxide.
 4. The method ofclaim 1, further comprising: forming a bonding layer on the firstsurface of the substrate; bonding an additional substrate to the bondinglayer; flipping the substrate on top of the additional substrate; andremoving a portion of the substrate.
 5. The method of claim 1, furthercomprising: depositing a dielectric layer in the first opening; removinga portion of the dielectric layer on the first S/D region; and formingthe first S/D contact structure on the dielectric layer.
 6. The methodof claim 1, wherein the forming the first S/D contact structurecomprises: forming a silicide layer on the first S/D region; and forminga metal contact structure on the silicide layer.
 7. The method of claim1, wherein: the portion of the first S/D region comprises a firstepitaxial stop layer and the portion of the second S/D region comprisesa second epitaxial stop layer; and the first device comprises aplurality of semiconductor layers and a gate dielectric layer having anegative capacitance dielectric material.
 8. The method of claim 1,further comprising forming an isolation structure between the first andsecond devices.
 9. A method, comprising: forming, on a first surface ofa substrate, a cross-over stacked semiconductor device including a firstdevice stacked over a second device, wherein the cross-over stackedsemiconductor device comprises a source/drain (S/D) region; etching asecond surface of the substrate and a portion of the S/D region to forman opening, wherein the second surface is opposite to the first surface;and forming, in the opening, a S/D contact structure in contact with theS/D region.
 10. The method of claim 9, further comprising: replacing thesubstrate with a dielectric layer; forming, in the dielectric layer, aninterconnect connected to the S/D contact structure; and connecting theinterconnect to a power supply.
 11. The method of claim 10, wherein thereplacing the substrate comprises: removing the substrate; and formingthe dielectric layer on the cross-over stacked semiconductor device,wherein the dielectric layer comprises silicon oxide.
 12. The method ofclaim 9, further comprising: replacing the substrate with a dielectriclayer; forming, in the dielectric layer, an interconnect connected tothe S/D contact structure; and connecting the interconnect to ground.13. The method of claim 9, further comprising: forming a bonding layeron the first surface of the substrate; bonding an additional substrateto the bonding layer; flipping the substrate on top of the additionalsubstrate; and removing a portion of the substrate.
 14. The method ofclaim 9, further comprising: depositing a dielectric layer in theopening; removing a portion of the dielectric layer on the S/D region;and forming the S/D contact structure on the dielectric layer.
 15. Themethod of claim 9, wherein the forming the S/D contact structurecomprises: forming a silicide layer on the S/D region; and forming ametal contact structure on the silicide layer.
 16. The method of claim9, wherein: the portion of the S/D region comprises an epitaxial stoplayer; and the cross-over stacked semiconductor device further comprisesa plurality of semiconductor layers and a gate dielectric layer having anegative capacitance dielectric material.
 17. A method, comprising:forming, on a first surface of a substrate, a first device having afirst source/drain (S/D) region stacked over a second device having asecond S/D region, wherein the first source/drain region is connected toa first S/D contact on the first surface; etching a second surface ofthe substrate and a portion of the second S/D region to form an opening,wherein the second surface is opposite to the first surface; andforming, in the opening, a second S/D contact structure in contact withthe first S/D region.
 18. The method of claim 17, further comprising:forming an interconnect connected to the second S/D contact structure;and connecting the interconnect to a power supply.
 19. The method ofclaim 17, further comprising: forming a bonding layer on the firstsurface of the substrate; bonding an additional substrate to the bondinglayer; flipping the substrate on top of the additional substrate; andremoving a portion of the substrate.
 20. The method of claim 17, furthercomprising: depositing a dielectric layer in the opening; removing aportion of the dielectric layer on the second S/D region; forming asilicide layer on the second S/D region; and forming a metal contactstructure on the silicide layer.